Seeking a semiconductor materials development engineer with experience in Metalorganic Chemical Vapor Deposition (MOCVD and/or Atomic Layer Deposition (ALD) related to GaN and related materials. Hands-on experience with MOCVD is most preferred. Candidate should have a strong background in thin film materials characterization, with experience with X-ray diffraction/reflectivity, photoluminescence, ellipsometry and atomic force microscopy. Experience with XPS, TEM, SIMS and basic electrical characterization including DLTS are also a plus.
Key Job Responsibilities:
1) Epitaxial development of GaN and related materials including equipment modification, repair and maintenance.
2) Atomic Layer Deposition of dielectric and metal thin films
3) Materials characterization including:
X-ray diffraction and reflectivity
Scanning probe microscopy (AFM)
Electrical: Hall, CV etc.
1) Candidate must have hands-on experience with repair and maintenance of MOCVD and/or ALD deposition equipment and a good working knowledge of the physics and chemistry of these deposition techniques.
2) Knowledge of electronic device physics, particularly compound semiconductor devices, and GaN in particular, is a plus
3) Candidate must have good communication skills and be highly motivated to work in a team environment.
4) Computer skills related to design of experiment (DOE), data analysis and basic programming for data processing and analysis are required.
5) EDUCATION requirement: Minimum of Masters degree, PhD. preferred, in Materials Science or Physics.
6) Experience level: Minimum 3 - 5 years experience in materials deposition and characterization is required.
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