This project involves the use of advanced transmission electron microscopy (TEM) and atomic force microscopy (AFM) to correlate the conduction paths, defect structure, microstructure and chemistry of thin film oxide heterostructures at the nanometer scale. Our goal is to explore the microstructural origins of emergent charge transport phenomena such as resistive switching behavior displayed by functional oxide heterostructures. The post-holder will also be responsible for fabrication of suitable AFM/TEM samples using a focused ion-beam system or electron beam lithography. The heterostructures will be deposited using facilities at Argonne and also by external collaborators. Some amount of modeling and simulation work will also be required.
Knowledge, Skills and Experience
Considereable experience in analysis of thin film and/or nanostructured materials using advanced AFM and TEM techniques.
Considerable experience with sample preparation techniques.
Considerable skill in written and oral communication.
Ph.D. in Materials Science or related field. Ph.D. must have been received within the last three years or expected within the next six months.
Minimum Education/Experience Requirements
Years Since Ph.D. -- 0-1, 1-2, 2-3
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